MSA1162GT1
TRANS GP PNP 50V SC59Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi MSA1162GT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This general-purpose component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 80MHz and a power dissipation of 200mW, it is suitable for various switching and amplification tasks. Key electrical specifications include a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 500mV at 10mA base current and 100mA collector current. The device is supplied in an SC-59 package (TO-236-3, SOT-23-3) and is available in bulk packaging. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
