MPSW92G
TRANS PNP 300V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSW92G is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 300 V. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 30 mA and 10 V, a transition frequency of 50 MHz, and a maximum power dissipation of 1 W. The saturation voltage (Vce Sat) is rated at 500 mV at 2 mA base current and 20 mA collector current. The device exhibits a low collector cutoff current (ICBO) of 250 nA and operates within a temperature range of -55°C to 150°C. This transistor finds utility in various industrial and consumer electronics sectors, including power supply regulation and general switching applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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