MPSW63G
TRANS PNP DARL 30V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW63G is a PNP Darlington bipolar junction transistor designed for high gain amplification. This component features a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. The MPSW63G exhibits a high DC current gain (hFE) of 10000 minimum at 100mA collector current and 5V Vce. It operates with a transition frequency of 125MHz and a maximum power dissipation of 1W. The device is packaged in a TO-92 (TO-226) through-hole configuration, suitable for a wide operating temperature range of -55°C to 150°C. This transistor is commonly utilized in power switching and amplification applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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