MPSW56RLRP
TRANS PNP GP BIPO 1W 80V TO-92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's MPSW56RLRP is a general-purpose PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 (TO-226) package. This device offers a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce) of 80 V. It features a transition frequency (fT) of 50 MHz and a power dissipation capability of 1 W. The DC current gain (hFE) is a minimum of 50 at 250 mA collector current and 1 V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 500 mV for 10 mA base current and 250 mA collector current. The operating temperature range is -55°C to 150°C. This component is commonly found in industrial controls and consumer electronics applications.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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