MPSW51G
TRANS PNP 30V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW51G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 1A. With a transition frequency of 50MHz and a maximum power dissipation of 1W, the MPSW51G is suitable for use in various industrial and consumer electronics, including audio amplifiers and power supply circuits. It offers a minimum DC current gain (hFE) of 60 at 100mA collector current and 1V Vce. The saturation voltage (Vce(sat)) is a maximum of 700mV at 100mA collector current and 100mA base current. The device is packaged in a TO-92 (TO-226) through-hole package and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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