MPSW51AG
TRANS PNP 40V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW51AG is a PNP bipolar junction transistor designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage (Vce(max)) of 40V and a continuous collector current (Ic(max)) of 1A, with a maximum power dissipation of 1W. The MPSW51AG offers a transition frequency (fT) of 50MHz and a minimum DC current gain (hFE) of 60 at 100mA and 1V. Its specified collector cutoff current (Icbo) is 100nA. The transistor exhibits a Vce(sat) of 700mV at 100mA and 1A. Packaged in a TO-92 (TO-226) through-hole configuration, this device operates within a temperature range of -55°C to 150°C. The MPSW51AG is suitable for use in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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