MPSW51
TRANS PNP GP BIPO 1W 30V TO-92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSW51, a PNP bipolar junction transistor, offers a 30V collector-emitter breakdown voltage and a maximum collector current of 1A. This general-purpose transistor features a power dissipation rating of 1W and a transition frequency of 50MHz. The DC current gain (hFE) is specified at a minimum of 160 at 100mA and 1V. The saturation voltage (Vce(sat)) is a maximum of 700mV at 100mA collector current and 1A collector current. It exhibits a collector cutoff current (ICBO) of 100nA (max). The MPSW51 is housed in a TO-92 (TO-226) through-hole package and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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