MPSW45RLRE
TRANS NPN DARL 40V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSW45RLRE NPN Darlington Transistor. This bipolar junction transistor features a 40V collector-emitter breakdown voltage and a maximum collector current of 1A. Achieving a minimum DC current gain of 25000 at 200mA and 5V, it offers a transition frequency of 100MHz. The device is rated for 1W maximum power dissipation. Designed for through-hole mounting, it is supplied in a TO-92 (TO-226) package. Key parameters include a Vce(sat) of 1.5V at 2mA/1A and a collector cutoff current of 100nA. The operating temperature range is -55°C to 150°C. This component is utilized in power switching and general-purpose amplification applications within industrial and consumer electronics. Packaged in Tape & Reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25000 @ 200mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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