MPSW45AZL1G
TRANS NPN DARL 50V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW45AZL1G is a high-gain NPN Darlington bipolar junction transistor designed for demanding applications. This component features a collector current capability of 1A and a collector-emitter breakdown voltage of 50V. With a minimum DC current gain (hFE) of 25,000 at 200mA and 5V, and a transition frequency of 100MHz, it offers robust amplification characteristics. The maximum power dissipation is 1W, and it operates within a temperature range of -55°C to 150°C. The device is housed in a TO-92 (TO-226) package with formed leads for through-hole mounting and is supplied in Tape & Box packaging. This transistor is suitable for use in power switching and general amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25000 @ 200mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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