MPSW42G
TRANS NPN 300V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW42G is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 500mA. With a maximum power dissipation of 1W and a transition frequency of 50MHz, it is suitable for various switching and amplification tasks. Key parameters include a minimum DC current gain (hFE) of 40 at 30mA/10V and a saturation voltage (Vce(sat)) of 500mV at 2mA/20mA. The operating temperature range spans from -55°C to 150°C. This device finds application in power supply circuits, general-purpose amplification, and high-voltage switching applications within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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