MPSW42
TRANS NPN 300V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW42 is an NPN bipolar junction transistor (BJT) designed for high voltage applications. This device features a collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 500mA. With a transition frequency of 50MHz and a power dissipation of 1W, it is suitable for general-purpose amplification and switching tasks. The DC current gain (hFE) is a minimum of 40 at 30mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV for 2mA base current and 20mA collector current. The transistor is housed in a TO-92 (TO-226) through-hole package. Typical industries utilizing this component include industrial control and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1 W |
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