MPSW3725
TRANS NPN 40V 1.2A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSW3725 is an NPN bipolar junction transistor (BJT) featuring a 40V collector-emitter breakdown voltage and a continuous collector current capability of 1.2A. This through-hole component, housed in a TO-226-3 package, offers a transition frequency of 250MHz and a maximum power dissipation of 1W. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 100mA and 1V, and a collector cutoff current (ICBO) of 100nA maximum. The saturation voltage (Vce Sat) is specified at 950mV maximum for an operating point of 100mA base current and 1A collector current. The MPSW3725 is suitable for applications in general switching and amplification circuits, commonly found in industrial and consumer electronics. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 950mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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