MPSW13RLRAG
TRANS NPN DARL 30V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW13RLRAG is an NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector current rating of 1 A and a collector-emitter breakdown voltage of 30 V. With a high DC current gain (hFE) of 10,000 minimum at 100 mA and 5 V, the MPSW13RLRAG excels in applications requiring significant current amplification. The transistor offers a transition frequency of 125 MHz and a maximum power dissipation of 1 W. It is packaged in a TO-92 (TO-226) through-hole package, supplied on tape and reel. The operating temperature range is -55°C to 150°C. This component is commonly found in consumer electronics, industrial controls, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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