MPSW06G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSW06G is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA, this component is suitable for power supply circuits and audio amplifiers. The device offers a minimum DC current gain (hFE) of 60 at 250mA and 250mA, with a transition frequency of 50MHz, ensuring efficient operation across a range of frequencies. Its low saturation voltage of 400mV at 10mA/250mA minimizes power loss during switching. Packaged in a TO-92 (TO-226) through-hole configuration, the MPSW06G operates within a temperature range of -55°C to 150°C. This transistor is commonly found in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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