MPSW05G
TRANS NPN 60V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi NPN bipolar junction transistor, part number MPSW05G, is engineered for robust performance in demanding applications. It features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 500mA, with a maximum collector cutoff current of 500nA. The minimum DC current gain (hFE) is specified at 60 at 250mA collector current and 1V collector-emitter voltage. With a transition frequency of 50MHz and a maximum power dissipation of 1W, this device is suitable for moderate power switching and amplification circuits. The saturation voltage is rated at 400mV maximum at 10mA base current and 250mA collector current. Housed in a TO-92 (TO-226) package, the MPSW05G is designed for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Typical industries utilizing this component include industrial automation and consumer electronics. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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