MPSW01G
TRANS NPN 30V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's MPSW01G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage (Vce) and a maximum continuous collector current (Ic) of 1A, with a typical saturation voltage (Vce(sat)) of 500mV at 1A collector current and 100mA base current. The MPSW01G exhibits a minimum DC current gain (hFE) of 60 at 100mA collector current and 1V collector-emitter voltage, and a transition frequency (fT) of 50MHz. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C, it is supplied in a TO-92 (TO-226) package suitable for through-hole mounting. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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