MPSW01ARLRP
TRANS NPN 40V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSW01ARLRP is an NPN bipolar junction transistor (BJT) designed for high-performance applications. This through-hole component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A, with a maximum collector cutoff current of 100nA. It offers a minimum DC current gain (hFE) of 60 at 100mA and 1V. The transition frequency is rated at 50MHz, and it can dissipate up to 1W of power. The transistor is housed in a TO-226 (TO-92) package with formed leads, supplied in Tape & Box packaging. Operating temperature range is -55°C to 150°C (TJ). This device is frequently utilized in power supply circuits, switching applications, and general-purpose amplification across various industrial electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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