MPSH34
TRANS NPN 40V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSH34 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 50mA. With a transition frequency of 500MHz and a maximum power dissipation of 625mW, the MPSH34 is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The transistor exhibits a minimum DC current gain (hFE) of 15 at 20mA collector current and 2V collector-emitter voltage. It is supplied in a TO-92-3 through-hole package. Key parameters include a Vce(sat) of 500mV at 2mA base current and 7mA collector current, and a collector cutoff current (ICBO) of 50nA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 7mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 20mA, 2V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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