MPSA93G
TRANS PNP 200V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA93G is a PNP Bipolar Junction Transistor designed for through-hole mounting in a TO-92 (TO-226) package. This component offers a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce(max)) of 200 V. It features a minimum DC current gain (hFE) of 25 at 30 mA and 10 V, with a transition frequency of 50 MHz. The device exhibits a maximum power dissipation of 625 mW and an operating temperature range of -55°C to 150°C. Key electrical characteristics include a collector cutoff current (Icbo) of 250 nA (max) and a Vce(sat) of 400 mV at 2 mA base current and 20 mA collector current. This transistor is suitable for applications in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 625 mW |
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