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MPSA64RLRMG

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MPSA64RLRMG

TRANS PNP DARL 30V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA64RLRMG is a PNP Darlington bipolar transistor, designed for applications requiring high current gain. This component features a collector-emitter breakdown voltage of 30V and can handle a continuous collector current of up to 500mA. With a maximum power dissipation of 625mW and a transition frequency of 125MHz, it is suitable for various amplification and switching tasks. The DC current gain (hFE) is a minimum of 20000 at 100mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce saturation of 1.5V at 100µA base current and 100mA collector current. The MPSA64RLRMG is provided in a TO-92 (TO-226) through-hole package, supplied on tape and box (TB). This component finds utility in consumer, industrial, and communications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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