MPSA64G
TRANS PNP DARL 30V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA64G is a PNP Darlington bipolar junction transistor designed for high gain applications. This through-hole component, packaged in a TO-92 (TO-226) case, offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 500mA. It features a minimum DC current gain (hFE) of 20000 at 100mA and 5V, with a transition frequency of 125MHz. The maximum power dissipation is 625mW, and it operates within a temperature range of -55°C to 150°C. The saturation voltage (Vce Sat) is a maximum of 1.5V at 100µA base current and 100mA collector current. This transistor is commonly utilized in power switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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