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MPSA63G

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MPSA63G

TRANS PNP DARL 30V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA63G is a PNP Darlington bipolar junction transistor designed for through-hole mounting in a TO-92 (TO-226) package. This component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. It features a high DC current gain (hFE) of 10000 at 100mA and 5V, a transition frequency of 125MHz, and a maximum power dissipation of 625mW. Saturation voltage (Vce) is specified at 1.5V maximum for an input of 100µA and collector current of 100mA. The operating temperature range is -55°C to 150°C. This device is suitable for applications in consumer electronics and general-purpose amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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