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MPSA56ZL1G

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MPSA56ZL1G

TRANS PNP 80V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA56ZL1G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce) of 80 V. It features a transition frequency (fT) of 50 MHz and a maximum power dissipation of 625 mW. The DC current gain (hFE) is a minimum of 100 at 100 mA collector current and 1 V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 250 mV for 10 mA base current and 100 mA collector current. The MPSA56ZL1G is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This device is supplied in Tape & Box (TB) packaging. Typical applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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