MPSA56G
TRANS PNP 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA56G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz, it is suitable for moderate frequency operations. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 1V. Its saturation voltage (Vce Sat) is specified at a maximum of 250mV at 10mA base current and 100mA collector current. The MPSA56G is packaged in a TO-92 (TO-226) through-hole package, rated for a maximum power dissipation of 625mW and operating temperatures from -55°C to 150°C. This transistor finds utility in consumer electronics, telecommunications, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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