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MPSA55RLRAG

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MPSA55RLRAG

TRANS PNP 60V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi MPSA55RLRAG is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 500mA. The device exhibits a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage. Its transition frequency is rated at 50MHz, making it suitable for moderate frequency operations. The maximum power dissipation is 625mW, and the collector-emitter saturation voltage is a maximum of 250mV at 10mA base current and 100mA collector current. This transistor is housed in a TO-92 (TO-226) package with formed leads, intended for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). The MPSA55RLRAG is supplied on a tape and reel for automated assembly processes. This component finds application in various electronic circuits across industrial and consumer markets.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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