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MPSA43ZL1G

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MPSA43ZL1G

TRANS NPN 200V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA43ZL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a breakdown voltage of 200V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 625mW, it is suitable for applications requiring moderate power handling. The device exhibits a minimum DC current gain (hFE) of 25 at 1mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 2mA base current and 20mA collector current. The MPSA43ZL1G is housed in a TO-92 (TO-226) package with formed leads, facilitating through-hole mounting. The operating temperature range is -55°C to 150°C. This transistor is commonly utilized in power supply circuits, lighting control, and general analog circuitry across various industrial and consumer electronics sectors. The MPSA43ZL1G is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max625 mW

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