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MPSA43RLRAG

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MPSA43RLRAG

TRANS NPN 200V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MPSA43RLRAG is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 (TO-226) package. This component features a maximum collector-emitter breakdown voltage of 200V and a continuous collector current capability of 500mA. The device offers a minimum DC current gain (hFE) of 25 at 1mA collector current and 10V Vce, with a transition frequency of 50MHz. Its maximum power dissipation is rated at 625mW. The MPSA43RLRAG is supplied in tape and reel packaging and finds applications in various industrial and consumer electronics, including power supply circuits and general-purpose amplification. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 2mA base current and 20mA collector current, with a collector cutoff current (ICBO) of 100nA. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max625 mW

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