MPSA43G
TRANS NPN 200V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA43G is an NPN bipolar junction transistor designed for high-voltage applications. This component features a 200V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 50MHz and a power dissipation of 625mW, it is suitable for general-purpose amplification and switching. The MPSA43G utilizes a TO-92 (TO-226) package, facilitating through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 25 at 1mA/10V, a collector cutoff current (ICBO) of 100nA, and a Vce saturation of 500mV at 2mA/20mA. This device operates within a temperature range of -55°C to 150°C. It is commonly employed in power supplies, lighting control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 625 mW |