MPSA43
TRANS NPN 200V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA43 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage of 200V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 625mW, the MPSA43 is suitable for use in power supply circuits, lighting controls, and general industrial automation. The transistor exhibits a minimum DC current gain (hFE) of 25 at 1mA collector current and 10V collector emitter voltage, with a saturation voltage (Vce Sat) of 500mV at 2mA base current and 20mA collector current. It is supplied in a TO-92 (TO-226) through-hole package, rated for operation across an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 625 mW |
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