MPSA42ZL1G
TRANS NPN 300V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA42ZL1G is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device offers a significant collector-emitter breakdown voltage of 300 V and a continuous collector current capability of up to 500 mA. It features a minimum DC current gain (hFE) of 40 at 30 mA collector current and 10 V collector-emitter voltage, with a transition frequency of 50 MHz. The MPSA42ZL1G is packaged in a TO-92 (TO-226) through-hole configuration, supplied in cut tape. Its maximum power dissipation is rated at 625 mW, and it operates within an ambient temperature range of -55°C to 150°C. This component is suitable for use in power supplies, lighting control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 625 mW |
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