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MPSA29RLRPG

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MPSA29RLRPG

TRANS NPN DARL 100V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MPSA29RLRPG is an NPN Darlington bipolar transistor designed for high gain applications. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. The device exhibits a minimum DC current gain (hFE) of 10000 at 100mA and 5V. With a transition frequency of 200MHz and a maximum power dissipation of 625mW, it is suitable for switching and amplification circuits. The collector cutoff current is a maximum of 500nA. The transistor is housed in a TO-92 package with through-hole mounting. Its saturation voltage (Vce(sat)) is up to 1.5V at 100µA base current and 100mA collector current. The operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial automation, consumer electronics, and lighting control systems. The MPSA29RLRPG is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max625 mW

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