Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

MPSA29G

Banner
productimage

MPSA29G

TRANS NPN DARL 100V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MPSA29G is a Bipolar Junction Transistor (BJT) featuring an NPN Darlington configuration. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 500mA. With a minimum DC current gain (hFE) of 10000 at 100mA and 5V, it is suitable for high-gain amplification applications. The transition frequency is rated at 200MHz, and the maximum power dissipation is 625mW. The device is housed in a TO-92 (TO-226) through-hole package, designed for easy board mounting. Typical applications include switching and amplification circuits in consumer electronics and industrial control systems. The operating temperature range is -55°C to 150°C. Collector cutoff current is a maximum of 500nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max625 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
MMBT2907-D87Z

TRANS PNP 40V 0.8A SOT23-3

product image
SMMBTA42LT3G

TRANS NPN 300V 0.5A SOT23-3