MPSA28G
TRANS NPN DARL 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA28G is an NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. The device exhibits a high DC current gain (hFE) of 10000 at 100mA and 5V, with a transition frequency of 200MHz. The collector-emitter saturation voltage is specified at 1.5V maximum at 100µA base current and 100mA collector current. With a maximum power dissipation of 625mW, the MPSA28G is housed in a TO-92 (TO-226) through-hole package, suitable for mounting in various electronic assemblies. Its operating temperature range extends from -55°C to 150°C. This transistor is commonly utilized in industrial control, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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