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MPSA28

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MPSA28

TRANS NPN DARL 80V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA28 is an NPN Darlington bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 80V and a maximum continuous collector current (Ic) of 500mA. With a high DC current gain (hFE) of 10000 at 100mA and 5V, it excels in low-level signal amplification. The transistor exhibits a transition frequency (fT) of 200MHz and a maximum power dissipation of 625mW. Packaged in a TO-92 (TO-226) through-hole configuration, it is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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