MPSA27G
TRANS NPN DARL 60V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA27G is a bipolar junction transistor (BJT) featuring an NPN Darlington configuration. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 500mA. With a significant minimum DC current gain (hFE) of 10,000 at 100mA and 5V, it is suitable for amplification and switching applications. The transistor is rated for a maximum power dissipation of 625mW and operates within a temperature range of -55°C to 150°C. It is housed in a TO-92 (TO-226) through-hole package, specifically the TO-226-3, TO-92-3 Long Body variant. The saturation voltage (Vce) is a maximum of 1.5V at 100µA base current and 100mA collector current. This device finds use in various industrial, consumer, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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