MPSA20G
TRANS NPN 40V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA20G is a general-purpose NPN bipolar junction transistor (BJT) designed for applications requiring moderate current and voltage handling. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 125MHz and a power dissipation of 625mW, it is suitable for use in amplification and switching circuits across various industrial sectors. The device offers a minimum DC current gain (hFE) of 40 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV with 1mA base current and 10mA collector current. The MPSA20G is supplied in a standard TO-92 (TO-226) through-hole package, facilitating easy integration into printed circuit boards. It operates within an industrial temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA, 10V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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