MPSA18G
TRANS NPN 45V 0.2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA18G is a high-gain NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 200mA. With a minimum DC current gain (hFE) of 500 at 10mA collector current and 5V collector-emitter voltage, the MPSA18G offers significant amplification factors. Its transition frequency reaches 160MHz, making it suitable for moderate frequency operations. The device dissipates a maximum power of 625mW and operates within an extended temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) through-hole configuration, this transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. The MPSA18G exhibits a saturation voltage (Vce(sat)) of 300mV at 5mA base current and 50mA collector current, ensuring efficient switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA, 5V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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