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MPSA14RLRP

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MPSA14RLRP

TRANS NPN DARL 30V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MPSA14RLRP is an NPN Darlington bipolar junction transistor designed for applications requiring high current gain. This component features a collector-emitter breakdown voltage of 30V and can handle a continuous collector current (Ic) of up to 500mA. The DC current gain (hFE) is a significant 20,000 minimum at 100mA collector current and 5V Vce. With a transition frequency of 125MHz and a maximum power dissipation of 625mW, it is suitable for switching and amplification tasks in industrial and consumer electronics. The transistor type is NPN - Darlington, and it is provided in a TO-92 (TO-226) package with formed leads, supplied in Tape & Box (TB) packaging. Operating temperature range is -55°C to 150°C. Saturation voltage (Vce) is a maximum of 1.5V at 100µA base current and 100mA collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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