MPSA13ZL1G
TRANS NPN DARL 30V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA13ZL1G is an NPN Darlington bipolar transistor designed for high gain applications. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 500mA. Featuring a transition frequency of 125MHz, it provides a minimum DC current gain (hFE) of 10000 at 100mA and 5V. The transistor exhibits a Vce saturation of 1.5V maximum at 100µA base current and 100mA collector current. Packaged in a TO-92 (TO-226) through-hole configuration with formed leads, the MPSA13ZL1G is suitable for operation across a wide temperature range of -55°C to 150°C. Its robust specifications make it a reliable choice for various industrial and consumer electronics applications requiring amplification or switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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