MPSA13RLRPG
TRANS NPN DARL 30V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA13RLRPG is an NPN Darlington bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 (TO-226) package. This component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. It features a high DC current gain (hFE) of 10000 at 100mA and 5V, with a transition frequency of 125MHz. The maximum power dissipation is rated at 625mW, and it operates within a temperature range of -55°C to 150°C. Saturation voltage (Vce(sat)) is 1.5V at 100µA base current and 100mA collector current. This device is commonly utilized in industrial, medical, and consumer electronics applications requiring high gain amplification and switching capabilities. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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