MPSA13RLRP
TRANS NPN DARL 30V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA13RLRP is a bipolar junction transistor featuring an NPN Darlington configuration. This device offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 500mA. With a DC current gain (hFE) of 10000 at 100mA and 5V, and a transition frequency of 125MHz, it is suitable for high-gain amplification and switching applications. The power dissipation is rated at 625mW. The MPSA13RLRP is housed in a TO-92 (TO-226) package, supplied in Tape & Box packaging, and designed for through-hole mounting. Typical applications include switching circuits, driver stages, and general-purpose amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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