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MPSA13RLRA

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MPSA13RLRA

TRANS NPN DARL 30V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPSA13RLRA is an NPN Darlington bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 500mA, this device offers a high DC current gain (hFE) of 10000 minimum at 100mA and 5V. The transition frequency is specified at 125MHz, and the power dissipation is 625mW. The transistor type is NPN - Darlington, with a saturation voltage (Vce Sat) of 1.5V maximum at 100µA base current and 100mA collector current. Encased in a TO-92 (TO-226) package, the MPSA13RLRA is supplied on tape and reel for automated assembly. It operates within an extensive temperature range of -55°C to 150°C. This component is commonly utilized in industrial control, consumer electronics, and telecommunications sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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