MPSA12RLRP
TRANS NPN DARL 20V TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA12RLRP is an NPN Darlington bipolar junction transistor designed for general-purpose applications. This component offers a high DC current gain (hFE) of 20000 (min) at 10mA collector current and 5V collector-emitter voltage, making it suitable for amplification and switching circuits requiring significant current gain. The MPSA12RLRP features a 20V collector-emitter breakdown voltage and a maximum power dissipation of 625mW. It is packaged in a TO-92 (TO-226) through-hole package, with leads formed for ease of insertion. The transistor operates within an extended temperature range of -55°C to 150°C. The MPSA12RLRP is commonly found in consumer electronics, industrial controls, and automotive systems. The device is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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