MPSA12RLRA
TRANS NPN DARL 20V TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA12RLRA is an NPN Darlington bipolar transistor offering a collector-emitter breakdown voltage of 20V. This device features a high DC current gain (hFE) of 20000 minimum at 10mA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 625 mW, it is housed in a TO-92 (TO-226) package suitable for through-hole mounting. The MPSA12RLRA exhibits a Vce saturation voltage of 1V maximum at 10µA base current and 10mA collector current, with a collector cutoff current (ICBO) of 100nA. Operating across a temperature range of -55°C to 150°C, this component is commonly utilized in general-purpose amplification and switching applications within industrial and consumer electronics. The MPSA12RLRA is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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