MPSA12G
TRANS NPN DARL 20V TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA12G is an NPN Darlington bipolar junction transistor designed for through-hole mounting in a TO-92 package. This device offers a collector-emitter breakdown voltage of 20V and a maximum power dissipation of 625mW. It features a high DC current gain (hFE) of 20000 at 10mA collector current and 5V collector-emitter voltage. The collector cutoff current (ICBO) is specified at 100nA. Saturation voltage (Vce Sat) is 1V maximum at 10µA base current and 10mA collector current. Operating temperature range is -55°C to 150°C. This component is typically utilized in power switching and amplification applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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