MPSA10
TRANS NPN 40V 0.1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA10 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 100mA. With a transition frequency of 125MHz and a maximum power dissipation of 625mW, the MPSA10 is suitable for use in consumer electronics and industrial control systems. The device offers a minimum DC current gain (hFE) of 40 at 5µA collector current and 10V collector-emitter voltage. It is packaged in a TO-92-3 (TO-226-3) through-hole package and operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5µA, 10V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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