MPSA06RLRMG
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA06RLRMG is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 80V collector-emitter breakdown voltage and a continuous collector current capability of 500mA. It exhibits a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage, with a transition frequency of 100MHz. The device has a maximum power dissipation of 625mW and a Vce saturation of 250mV at 10mA base current and 100mA collector current. The MPSA06RLRMG is supplied in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. It is available in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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