MPSA06RL1G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPSA06RL1G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features an 80V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 100MHz and a power dissipation of 625mW, it offers reliable performance in demanding environments. The TO-92 (TO-226) package with formed leads is suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a Vce(sat) of 250mV at 10mA/100mA. The MPSA06RL1G is supplied in a Tape & Reel (TR) package. This transistor finds application in various industrial, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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