MPSA06RL1
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA06RL1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. The transistor exhibits a transition frequency of 100MHz and a maximum power dissipation of 625mW. Its DC current gain (hFE) is rated at a minimum of 100 at 100mA collector current and 1V collector emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 10mA base current and 100mA collector current. Packaged in a TO-92 (TO-226) through-hole configuration and supplied on a tape and reel, the MPSA06RL1 is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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