MPSA06G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPSA06G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 500mA. It features a transition frequency of 100MHz and a maximum power dissipation of 625mW. The device exhibits a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 250mV with 10mA base current and 100mA collector current. The operating temperature range is -55°C to 150°C. Applications include consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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